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SiC MOSFET Wikipedia

Metall-Oxid-Halbleiter-Feldeffekttransistor - Wikipedi

  1. Metall-Oxid-Halbleiter-Feldeffekttransistor. Ein Metall-Oxid-Halbleiter-Feldeffekttransistor ( englisch metal-oxide-semiconductor field-effect transistor, MOSFET auch MOS-FET, selten MOST) ist eine zu den Feldeffekttransistoren mit isoliertem Gate ( IGFET) gehörende Bauform eines Transistors. In ihrer ursprünglichen und auch heute noch oft.
  2. eral moissanite. Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive
  3. MOSFET devices are also applied in audio-frequency power amplifiers for public address systems, sound reinforcement and home and automobile sound systems. [citation needed] MOSFETs in integrated circuits are the primary elements of computer processors, semiconductor memory, image sensors, and most other types of integrated circuits
  4. Ein Leistungs-MOSFET ist eine spezialisierte Version eines Metall-Oxid-Halbleiter-Feldeffekttransistors, der für das Leiten und Sperren von großen elektrischen Strömen und Spannungen optimiert ist. Leistungs-MOSFETs unterscheiden sich von bipolaren Leistungstransistoren sowohl in der Funktionsweise als auch in der Effizienz. Einige Vorteile von Leistungs-MOSFETs sind die schnelle Schaltzeit, kein zweiter Durchbruch und stabile Verstärkungs- und Antwortzeiten. Ab einer.
  5. A power MOSFET is a specific type of metal-oxide-semiconductor field-effect transistor designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to.

Silicon carbide Power MOSFET Device Simulation CoolSPICE also has models for simulating Wide-bandgap semiconductor devices, which include power MOSFETs , SiC BJTs, and GaAs power FETs . The SPICE simulation models for SiC-power MOSFET devices for the software were developed using sub-circuits built around the standard BSIM MOSFET Ein Bipolartransistor mit isolierter Gate-Elektrode ist ein Halbleiterbauelement, das in der Leistungselektronik verwendet wird, da es Vorteile des Bipolartransistors und Vorteile eines Feldeffekttransistors vereinigt. Es gibt vier verschiedene Grundtypen von IGBTs, welche durch vier verschiedene Schaltsymbole dargestellt werden. Je nach Dotierung des Grundmaterials lassen sich n- und p-Kanal-IGBTs herstellen. Diese unterteilen sich jeweils in einen selbstleitenden und einen. Silicon Carbide (SiC) is a wide bandgap material. Wide bandgap technologies have many advantages compared to Silicon. Operating temperatures are higher, heat dissipation is improved and switching and conduction losses are lower. However, wide bandgap materials are more difficult to mass produce compared to silicon based ones ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance R DS (on) per area Figure Of Merit Der high-electron-mobility transistor ist eine spezielle Bauform des Feldeffekttransistors für sehr hohe Frequenzen und ist von der Konstruktion her eine spezielle Bauform eines MESFET. Andere Bezeichnungen für diesen Transistortyp sind modulation-doped field-effect transistor, two-dimensional electron-gas field-effect transistor, selectively-doped heterojunction transistor und heterojunction field-effect transistor. Er wurde von Takashi Mimura und Kollegen 1979 bei Fujitsu entwickelt

A silicon carbide MOSFET was first created by Wolfspeed about 20 years ago. Compared to silicon MOSFETs, these MOSFETs provide higher temperature operation, an increased critical breakdown strength (10x that of silicon), higher switching frequencies, and reduced switching losses For this simulation analysis, a 6H-SiC based UMOSFET was selected owing to its high breakdown field, and it was the first polytype of SiC used for this device structure. The device is designed for a blocking voltage of 2000V. The corresponding blocking layer thickness and the concentration were selected from Fig

Silicon carbide - Wikipedi

In dem nach seinem Erfinder E.G. Acheson benannten Acheson-Prozess wird bis heute SiC für die Schleifmittelindustrie hergestellt. 1904 entdeckte H. Moissan Siliziumkarbid in einem Meteoritenkrater in Arizona, dass er nach dem Diamant für das »zweithärteste natürliche Mineral« hielt. Es folgte die mineralogische Aufarbeitung. Danach dauerte es bis ins Jahr 1955, bi The primary application of silicon carbide would be in high power semiconductor switches like power MOSFET or IGBT. Higher breakdown electric field and thermal stability of SiC promise to result in much superior properties in terms of high temperature, high frequency operation of power electronics systems based upon SiC devices Der Wechselrichter kann aus Leistungshalbleitern, wie IGBTs, FETs, MOSFETs, SJ-MOSFETs, SiC-MOSFETs und GaN HEMTs bestehen. Ein IGBT-Wechselrichter ist ein Wechselrichter, der mit IGBT Leistungsmodulen aufgebaut ist, um die Umwandlung von Strom sicherzustellen

MOSFET - Wikipedi

Leistungs-MOSFET - Wikipedi

  1. ST strengthens its internal SiC ecosystem, from materials expertise and process engineering to SiC-based MOSFET and diodes design and manufacturing Geneva, Switzerland / 02 Dec 2019 STMicroelectronics (NYSE: STM) , a global semiconductor leader serving customers across the spectrum of electronics applications, today announced the closing of the full acquisition of Swedish silicon carbide (SiC.
  2. Our next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high-repetitive Unclamped Inductive Switching (UIS) capability and excellent gate oxide shielding and channel integrity for robust operation. Our SiC MOSFET and SiC SBD die can be paired for use in power modules with various topologies. SiC Devices and Power Modules Offer: Improved system efficiency with.
  3. Power SiC: more than $4 billion The 2nd report includes 29 SiC transistors: 25 SiC MOSFETs and 4 SiC JFETs, of 5 voltage classes. Developed by Rohm, STMicroelectronics, Wolfspeed, Infineon Technologies, Littelfuse, ON Semiconductor, Microsemi, and UnitedSiC, they target different power applications, including two automotive qualified devices. Press Release 4 In addition, the CS Quarterly.
  4. The SiC MOSFET die is capable of operation at junction temperatures greater than 200°C, but the engineering sample is limited in temperature to 150°C by its TO-247 plastic package. Compared with a Si IGBT, a SiC MOSFET has a substantial advantage in conduction losses, particularly at lower power outputs. By virtue of its unipolar nature, it has no tail currents at turn-off, thereby leading.

Power MOSFET - Wikipedi

Dennoch bietet Wikipedia diese Definitionen: Wenn Sie einen MOSFET für die PWM-Schaltung verwenden, sollten Sie immer versuchen, im linken Bereich des Diagramms zu bleiben. Denken Sie daran, dass ein MOSFET ein spannungsgesteuertes Strombegrenzungsgerät ist. Wenn zwischen dem Gate und den Source-Pins genügend Spannung vorhanden ist (V G S > V t h V G S > V t h) lässt der MOSFET Strom. 1200V SiC MOSFET - C2M0025120D. 1.2kV Half-Bridge Power Module - C2M0025120D. 2014 Electronic Product Design & Test e-Legacy Award, Energy, 1.2kV Half-Bridge Power Module - C2M0025120D. High-Performance Silicon Carbide-based Plug-In Hybrid Electric Vehicle Battery Charger (Collaboration with APEI) 2014 R&D 100 Award, Energy, High-Performance Silicon Carbide-based Plug-In Hybrid Electric.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) V současnosti se již podařilo vyrobit tranzistory MOSFET i na bázi SiC (silikon-karbid) a GaAs (galium arsenid), což umožnilo rozšířit aplikační oblast do vyšších napětí a frekvencí. Technologie výroby. Přestože unipolární tranzistory byly vynalezeny jako první z tranzistorů ve 20. letech 20. století. Ein fast-recovery epitaxial diode field-effect transistor (auch fast-reverse epitaxial diode field-effect transistor, abgekürzt FREDFET oder FredFET, englisch) ist ein spezieller Leistungsfeldeffekttransistor, welcher besonders zum Schalten von induktiven Lasten (Transformatoren, Elektromotoren) in Vollbrückenschaltung (Vierquadrantensteller oder quasi-resonante Gegentakt-Schaltnetzteile. CoolSPICE is a computer aided design tool for electronic circuit development. It is a version of the SPICE (Simulation Program with Integrated Circuit Emphasis) simulation tool with focuses on design and simulation for circuit operation at cryogenic temperatures, circuits operating with Wide-bandgap semiconductors, and simulation of thermal effects on circuit performance

What are the switching frequencies that a transistor (BJTFichier:Mosfet cross section-fr

Siliziumkarbid ist Halbleitermaterial mit großer Zukunft. Allerdings ist die Herstellung solcher Wafer sehr komplex und schwierig. Die DESIGN&ELEKTRONIK sprach mit Dr. Robert Eckstein, CEO des SiC-Waferherstellers SiCrystal darüber, wie eigentlich ein SiC-Wafer entsteht ST strengthens its internal SiC ecosystem, from materials expertise and process engineering to SiC-based MOSFET and diodes design and manufacturing Geneva, Switzerland / 02 Dec 2019 STMicroelectronics (NYSE: STM) , a global semiconductor leader serving customers across the spectrum of electronics applications, today announced the closing of the full acquisition of Swedish silicon carbide (SiC.

Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching converters. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at any given frequency. Prior to the availability of superjunction MOSFETs the dominant design platform for high-voltage devices was based on planar technology. SiC discrete devices are available from 650 V to 1700 V while maximum rated current is around 120 A. In this range, TO247/220/263 and SOT 227 packages are the dominating forms of power devices. There are varieties on the pin-configu-rations and Kelvin Gate structure in these traditional packages. However, the nature of TO and SOT packages introduce high parasitic power loop inductances. Anwendung []. MOSFETs und IGBTs werden mit einer Spannung gesteuert. Bei einer Gate-Source bzw. Gate-Emitter Spannung von 0V ist das Bauteil gesperrt bzw. hochohmig. Steigt die Spannung über die sogenannte Schwellenspannung (engl. threshold voltage) - die für Leistungsbauteile zwischen ca. 3 und 4,5V liegt - geht das Bauteil langsam vom gesperrten in den leitenden Zustand über

Field-effect transistor - Wikipedia

Application Note 3 of 13 V 1.0 2018-01-31 PCB layout guidelines for MOSFET gate driver Part I: 2EDN/1EDN family Introduction Figure 3 shows part of the schematic in the middle of the board, where EiceDRIVERTM 2EDN7524F (IC2) gate driver is used to drive low-side TO-220 600 V CoolMOSTM P7 SJ MOSFET (Q8) on the primary side of the LLC resonant converter and the TO-247 3-pin 600 V CoolMOSTM P7 SJ. 7.1.1 Basic Structure and Principle of Operation The n-type Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) consists of a source and a drain, two highly conducting n-type semiconductor regions which are isolated from the p-type substrate by reversed-biased p-n diodes. A metal (or poly-crystalline) gate covers the region between source and drain, but is separated from the. We continuously add SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry - ranging from ultra-low to high-voltage power devices. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to. Selecting the right SiC FET for your design made easy. Get Started Now. Product Overview. Key technological info for new Gen 4 SiC FETs. Download; Application Note. 99.37% Efficiency in 3.8kW TPPFC. Download; FET-Jet Calculator. Selecting the best devices for your design. Get Started Now; Products SiC FETs . SiC JFETs . SiC Schottky Diodes . Resources SiC FET Design Tips. Supporting the move.

It is well accepted that for SiC MOSFETs, the threshold voltage decreases with increasing temperature for two reasons: one is that the Fermi level approaches the midgap, thus lower gate voltage is needed to move surface potential to the inversion condition, the other is that the trapped holes can be emitted more easily, thus less positive charges at the interface [29] A gate driver IC serves as the interface between control signals (digital or analog controllers) and power switches (IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). An integrated gate-driver solution reduces design complexity, development time, bill of materials (BOM), and board space while improving reliability over discretely-implemented gate-drive solutions

News Alpha and Omega Semiconductor Announces Application-Specific EZBuck™ Regulator to Power Intel Rocket Lake Platformmore »; News Alpha and Omega Semiconductor Announces AlphaZBL™ AC-DC Active Bridge Rectifier Solutionsmore »; News Alpha and Omega Semiconductor Releases Automotive Qualified 1200V αSiC MOSFETs for Electric Vehicle Applicationsmore MOSFET (Si/SiC) 12V-300V N-Channel Power MOSFET; IRF530N; IRF530N. Overview. 100V Single N-Channel IR MOSFET in a TO-220AB package. Summary of Features . Planar cell structure for wide SOA; Optimized for broadest availability from distribution partners; Product qualification according to JEDEC standard; Silicon optimized for applications switching below <100kHz; Industry standard through-hole. Power MOSFETs The Fuji Electric lineup of power MOSFETs ranges from low to high withstand voltage types and includes features such as low power loss, low noise, and low on-resistance. We have also developed the Super J MOS ® Series using super-junction technology, mainly for 600 V withstand voltage products

Video: CoolSPICE - Wikipedi

Bipolartransistor mit isolierter Gate-Elektrode - Wikipedi

IGBT and MOSFET operation is very similar. A positive voltage, applied from the emitter to gate terminals, produces a flow of electrons toward the gate terminal in the body region. If the gate to emitter voltage is equal or above the threshold voltage, electrons flow toward the gate to form a conductive channel across the body region, allowing current to flow from the collector-to-emitter. (It. SiC MOSFET inverter, AERO Friedrichshafen 2018, Friedrichshafen (1X7A4750) (cropped).jpg 3.394 × 2.269; 3,12 MB. SiC Unipolar Switches V01.png 1.143 × 447; 45 KB. Sony VPL-HS1 - power supply module 2 - Fuji Electric K2876-93138.jpg 2.642 × 3.522; 5,49 MB. Terra Pad 1050 - AO4419 on mainboard-0642.jpg 1.627 × 1.627; 1,73 MB. Terra Pad 1050 - Fairchild FDS6900AS on mainboard-0637.jpg 1.599. DURHAM, N.C., September 2, 2015 - Cree, Inc. (Nasdaq: CREE), a leader in silicon carbide (SiC) power products and gallium nitride (GaN) radio frequency (RF) devices, today announced that Wolfspeed is the new name for the Power and RF division of Cree. The company announced in May that it would separate the business into a standalone company About Wikipedia; Disclaimers; Search. JFET. Language; Watch; Edit; This article needs additional citations for verification. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed. September 2015) (Learn how and when to remove this template message) The junction-gate field-effect transistor (JFET) is one of the simplest types.

Silicon Carbide SiC - STMicroelectronic

SiC Diodes (65) Diodes. Power Diodes (Hyperfast Recovery) (55) Power Diodes (Ultrafast Recovery) (113) Power Schottky Diodes (11) Standard Power Diodes (7) Thyristors. 3-Quadrant Triacs (High Commutation) (254) 4-Quadrant Triacs (164) AC Thyristor Triacs (44) AC Thyristors (7) SCRs (111) Automotive Grade Products. Thyristors (2) Silicon Carbide Power Diode (1) Transistors. high voltage. SiC-MOSFET-Gate-Treiber NCx51705 Der 6-A-Hochgeschwindigkeits-Einzeltreiber von ON Semiconductor kann die maximal zulässige Gate-Spannung für einen SiC-MOSFET-Baustein liefern Der Low-Side-6-A-Einzeltreiber NCx51705 von ON Semiconductor ist in erster Linie für die Ansteuerung von SiC-MOSFET-Transistoren vorgesehen. Um möglichst geringe Leitungsverluste zu erzielen, kann der Treiber die By the end of this year, STMicroelectronics expects to have qualified a new-generation of 1.2-kV MOSFETs to the AEC-Q101 standard. It already has qualified 650-V SiC diodes grown on 4-in. wafers. Like Wolfspeed, it's engaged in growing SiC devices on larger wafers to bring down manufacturing costs, improve quality, and deliver the large volumes needed by automotive manufacturers A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages Sic mosfet. Kaufen Sie Mosfet bei Europas größtem Technik-Onlineshop Mosfet P zum kleinen Preis hier bestellen. Super Angebote für Mosfet P hier im Preisvergleich In comparison to traditional Silicon based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages.CoolSiC™ MOSFET products in 1700 V, 1200 V and 650 V target photovoltaic inverters.

Power semiconductor device - Wikipedia

STPOWER SiC MOSFETs - STMicroelectronic

The UF3C120150K4S combines a high-voltage SiC JFET and low-voltage silicon MOSFET for gate-drive compatibility, while its 4-terminal TO-247 package with Kelvin connections enhances dynamic. Bias Stress Testing of SiC MOSFETs Robert Shaw Manager, Test and Qualification August 15th, 2014 Special thanks to the U.S. Department of Energy for funding this under SBIR DE-SC0011315. APEI // Public Outline • Objectives • Test Plans -High Temperature Gate Bias (HTGB) -Gate Switching Bias -DC Body Diode Bias -Pulsed Body Diode Bias • Initial Characterization (t0) Results. Verschaffen Sie sich hier einen Überblick über die Gate-Treiber-ICs von Infineon für MOSFETs, IGBTs, SiC MOSFETs sowie GaN- und HEMT-Transistoren. Produkte. Get product recommendations for your application. Let's work together to build your personalized block diagram. Anwendungsfälle und Einsatzbereiche: Industrieantriebe. Industrieantriebe. Elektrowerkzeuge. Elektrowerkzeuge. Heim- und.

High-electron-mobility transistor - Wikipedi

Making the Most of SiC MOSFETs' Performance for Solar: Technical paper: 2019-04 PDF, 431 KB: Solar + Power Supply: The Challenges of Using SiC MOSFET-based Power Modules for Solar Inverters: Technical paper: 2018-06 PDF, 1 MB: Motion Control: Power Modules in Low Power Drive Applications : Technical paper: 2018-11 PDF, 136 KB: Solar + Power Supply: New Generation of Fast 650 V IGBT. Power MOSFETs on SiC have also been the subject of extensive research. Silicon carbide has a significantly higher critical breakdown field than silicon. This allows a power MOSFET on SiC to achieve the same blocking voltage as a similar device on silicon in a much thinner drift region. Unlike thyristors, MOSFETs exhibit a saturating current-voltage characteristic, giving a large safe. This new series of SiC MOSFETs and the evaluation board are now available for purchase. The new series of SiC MOSFETs. Availability: Now. Price: Starting from $10.15/unit (1,000pcs) Key Advantages. 4-Pin package (TO-247-4L) reduces switching loss by up to 35% With conventional 3-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the. Wikipedia Create Alert. Related topics. Related topics 7 relations. Hilbert space Measurement in quantum mechanics Mutually unbiased bases POVM. Expand. Papers overview. Semantic Scholar uses AI to extract papers important to this topic. 2017. 2017. Fibonacci-Lucas SIC-POVMs. M. Grassl, A. J. Scott; 2017; Corpus ID: 119091230. We present a conjectured family of symmetric informationally. Wikipedia Create Alert. Papers overview. Semantic Scholar uses AI to extract papers important to this topic. 2018. 2018. Novel Tiny 1.2kV SiC MOSFET Gate Driver. K. Nguyen, Nam Nguyen-Quang; 1st Workshop on Wide Bandgap Power Devices and 2018; Corpus ID: 189824154. The purposes of this research are to design and to prototype a 1.2kV Silicon-Carbide (SiC) MOSFET gate driver which is as.

Importancia de la conexión fuente-cuerpo en elWiki mosfet, mosfet scaling and miniaturization has been

MOSFETs, these components include capacitors due to displaced charge in the junction between p and n regions, resistors associated with material resistivity, a body diode formed where the p+ body diffusion is made into the n-epi-layer, and an NPN (bi-polar junction transistor henceforth called BJT) sequence (BJT) formed where the n+ source contact is diffused. See figure 4 for power MOSFET. The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design. It was developed by C. C. Enz, F. Krummenacher and E. A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s. Unlike simpler models like the Quadratic Model, the EKV Model is. Discrete SiC MOSFETs; Discrete SiC Schottky Diodes; Bare Die SiC MOSFETs; Bare Die SiC Schottky Diodes; SiC Power Modules; Gate Driver Boards; Reference Designs; Evaluation Kits; Where to Buy; Contact ; RF Products. All Aerospace & Defense; Telecom; General-Purpose Broadband, 28 V; General-Purpose Broadband, 40 V; General-Purpose Broadband, 50 V; C-band Radar; L-band Radar; S-band Radar; X. Konstrukcija. MESFET tranzistori se izrađuju kompleksnim poluprovodničkim tehnologijama. Materijali od kojih mogu da se izrađuju su GaAs, InP, SiC s tim da je najčešće korišćen materijal GaAs. Ovi tranzistori su mnogo brži ali i mnogo skuplji od silicijumskih JFET ili MOSFET tranzistora a povećana cena dolazi usled tehnologije neophodnosti eliminisanja nečistoća MOSFET. From the above MOSFET structure, the functionality of MOSFET depends on the electrical variations happening in the channel width along with the flow of carriers (either holes or electrons).The charge carriers enter into the channel through the source terminal and exit via the drain. The width of the channel is controlled by the voltage on an electrode which is called the gate and it is.

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